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Department Introduction
The Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed-signal circuits enabling advanced NAND Flash memory products. Close collaboration with multi-functional teams ensures scalable, manufacturable, and reliable solutions across technology nodes. Come and join us!
Position Overview
As a Senior Design Engineer in the NVE Design Engineering Datapath group at Micron Semiconductor Italia, you will contribute to the development of best‑in‑class NAND Flash memory products, focusing on datapath architectures and high‑speed interfaces.
In this role, you will support the design, optimization, and validation of NAND datapath logic and DDR high‑speed interfaces, working at block and sub‑system level and contributing to full‑chip integration. You will apply your expertise in high‑speed CMOS circuits, timing, signal integrity, and power optimization, using both industry‑standard tools and Micron‑proprietary methodologies.
Responsibilities
Responsibilities include, but not limited to:
- Design and optimize high-speed datapath and interface circuits, ensuring timing closure and performance at block and sub-system level.
- Translate system and interface requirements into circuit architectures and transistor-level implementations, balancing performance, power, and area.
- Perform functional, timing, and signal integrity verification using advanced simulation methodologies (including PVT and corner analysis).
- Collaborate with multi-functional teams to ensure accurate floorplan integration, manufacturability, and alignment with product specifications.
- Develop and apply automation solutions (e.g., scripting, AI-assisted methodologies) and support silicon validation, debug, and documentation.
Min Qualifications
- M.S. or Ph.D. in Electrical Engineering, Electronics, or a related field.
- Solid understanding of high-speed digital, analog, and mixed-signal CMOS circuit design.
- Solid understanding of timing, signal integrity, noise, variability, and deep-submicron device effects.
- Hands-on experience with industry-standard simulation tools (e.g., SPICE, mixed-signal, RTL/Verilog-based flows).
- Strong problem-solving and communication skills, with ability to work effectively in dynamic, multi-functional environments.
Preferred Qualifications
- Experience in NAND Flash or other non-volatile memory technologies.
- Experience with high-speed interfaces (e.g., DDR, LPDDR, GDDR, or SerDes).
- Familiarity with design automation, scripting (e.g., Python), or AI-assisted design approaches.
- Understanding of layout constraints, physical design flows, and ESD considerations.
About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all . With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.
To learn more, please visit micron.com/careers
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.
To request assistance with the application process and/or for reasonable accommodations, please contact [email protected] .
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